1 si photodiode s4349 quadrant si pin photodiode www.hamamatsu.com quadrant (2 2) element format wide spectral response range: 190 to 1000 nm to-5 metal package low crosstalk: 2% max. high-speed response: fc=20 mhz features laser beam axis alignment position sensing applications the s4349 is a quadrant si pin photodiode having sensitivity in the uv to near ir spectral range. a quadrant element format allows position sensing such as for laser beam axis alignment. structure parameter symbol value unit window material - quartz glass - photosensitive area a ? 3.0/4 elements mm element gap - 100 m absolute maximum ratings parameter symbol value unit reverse voltage v r max 20 v operating temperature topr -20 to +60 c storage temperature tstg -55 to +80 c note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. electrical and optical characteristics (ta=25 c, per 1 element) parameter symbol condition typ. max. unit spectral response range 190 to 1000 - nm peak sensitivity wavelength p 720 - nm photosensitivity s = p 0.45 - a/w dark current i d v r =5 v 0.01 0.2 na temperature coef cient of i d t cid 1.12 - times/c cutoff frequency fc v r =5 v, r l =50 =780 nm, -3 db 20 - mhz terminal capacitance ct v r =5 v, f=1 mhz 25 - pf noise equivalent power nep v r =5 v, = p 4.0 10 -15 - w/hz 1/2 crosstalk c l v r =5 v, =780 nm - 2 %
2 si photodiode s4349 spectral response dark current vs. reverse voltage photosensitivity temperature characteristics terminal capacitance vs. reverse voltage 0.5 0.4 0.3 0.2 0 190 400 600 800 1000 wavelength (nm) photosensitivity (a/w) 0.6 0.7 0.8 (typ. ta=25 c) 0.1 kmpdb0126ea 0 190 400 600 800 1000 +1.0 +0.5 (typ.) +1.5 -0.5 wavelength (nm) temperature coefficient (%/c) kmpdb0127ea reverse voltage (v) dark current 100 pa 1 na 10 pa 1 pa 100 fa 10 fa 0.01 0.1 1 10 100 (typ. ta=25 c) kmpdb0128ea reverse voltage (v) terminal capacitance (typ. ta=25 c, f=1 mhz) 1 nf 10 pf 1 pf 100 ff 0.1 1 10 100 100 pf kmpdb0129ea
3 si photodiode s4349 precautions against uv light exposure ? when uv light irradiation is applied, the product characteristics may degrade. such examples include degradation of the product ?s uv sensitivity and increase in dark current. this phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ? exposure to uv light may cause the characteristics to degrade due to gas released from the resin bonding the product?s componen t materials. as such, we recommend that you avoid applying uv light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. dimensional outline (unit: mm) kmpda0114ea 13.5 photosensitive area details of photodiode photosensitive surface window 5.9 0.1 8.1 0.2 9.2 0.2 2.95 4.1 0.2 a bc d 0.1 ?0.45 lead 0.1 anode d anode a cathode (case) anode b anode c cathode (case) nc 3.0 ?5.08 0.2
www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, bridgewater, n.j. 08807, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-23 1-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: torshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-5 09-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese (milano), italy, telephone: (39) 02-93581733 , fax: (39) 02-93581741 china: hamamatsu photonics (china) co., ltd.: b1201, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020 , china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of october, 2015. cat. no. kmpd1007e03 oct. 2015 dn 4 si photodiode s4349 related information www.hamamatsu.com/sp/ssd/doc_en.html precautions ? disclaimer ? metal, ceramic, plastic package products technical information ? si photodiode/application circuit examples
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